TI MOSFETs Tout Lowest On-Resistance

| November 6, 2013 | 0 Comments
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Dallas, Tex. −Texas Instruments (TI) touts the smallest, low on-resistance MOSFETs for space-constrained handheld applications including smartphones and tablets. The FemtoFET MOSFET transistors feature ultra-small packaging, measuring 0.6- x 1.0- x 0.35-mm, and an on-resistance of below 100 milliohms.

TI-FemtoFETThe three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40 percent when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 small-signal MOSFET transistors  feature ultra-low on-resistance below 100 milliohm, which is 70 percent lower than similar devices, according to TI. All devices provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM). Watch a video here.

Key features:

  • On-resistance under 100 milliohm is 70 percent lower than similar devices, providing power savings and longer battery life.
  • Measuring 0.6- x 1.0- x 0.35-mm, the FemtoFET LGA packages are 40 percent smaller than standard CSP.
  • Continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today, according to TI.

Availability: Volume production available from TI and authorized distributors.

Pricing: Ranges from $0.06 in quantities of 1,000 for the CSD17483F4 to $0.10 for the CSD17381F4.

Technical Information: Power Management Forum, WEBENCH Power Designer, and PowerLab Reference Design Library

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Category: Consumer Electronics, Hot Products, Industries, New Products, Semiconductors

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